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Very low threshold planar buried heterostructure InGaAsP/InP laser diodes prepared by three-stage metalorganic chemical vapor deposition.
- Source :
-
Applied Physics Letters . 9/21/1987, Vol. 51 Issue 12, p874. 3p. - Publication Year :
- 1987
-
Abstract
- Low threshold InGaAsP/InP lasers with planar buried heterostructure were grown entirely by low-pressure metalorganic chemical vapor deposition (MOCVD). The threshold current Ith=10 mA and the differential quantum efficiency ηd =60%, which are comparable to lasers grown by liquid phase epitaxy, were obtained. Most lasers randomly selected from one wafer have threshold currents of Ith=10–25 mA, because of high thickness uniformity of MOCVD growth. Stable fundamental transverse mode operation was also obtained up to an output power of 40 mW/facet, due to controlling the active layer width less than 2 μm. [ABSTRACT FROM AUTHOR]
- Subjects :
- *INDIUM compounds
*LASERS
*HETEROSTRUCTURES
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 51
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9824235
- Full Text :
- https://doi.org/10.1063/1.98840