Cite
Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors.
MLA
Zhao Sheng-Lei, et al. “Reverse Blocking Enhancement of Drain Field Plate in Schottky-Drain AlGaN/GaN High-Electron Mobility Transistors.” Chinese Physics B, vol. 23, no. 9, Sept. 2014, p. 1. EBSCOhost, https://doi.org/10.1088/1674-1056/23/9/097305.
APA
Zhao Sheng-Lei, Wang Yuan, Yang Xiao-Lei, Lin Zhi-Yu, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, & Hao Yue. (2014). Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors. Chinese Physics B, 23(9), 1. https://doi.org/10.1088/1674-1056/23/9/097305
Chicago
Zhao Sheng-Lei, Wang Yuan, Yang Xiao-Lei, Lin Zhi-Yu, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, and Hao Yue. 2014. “Reverse Blocking Enhancement of Drain Field Plate in Schottky-Drain AlGaN/GaN High-Electron Mobility Transistors.” Chinese Physics B 23 (9): 1. doi:10.1088/1674-1056/23/9/097305.