Optically pumped laser oscillation at 3.82 μm from InAs1-xSbx grown by molecular beam epitaxy on GaSb.

Molecular beam epitaxy has been used to grow InAs1-xSbx active layers on GaSb substrates. Lattice matches of better than 10-3 were obtained with x[bar_over_tilde:_approx._equal_to]0.09. Index waveguiding of the relatively low refractive index InAs1-xSbx is obtained by using an adjacent GaSb guiding layer and a lower refractive index Al0.5Ga0.5Sb cladding layer. Optically pumped laser emission at 3.82 μm has been observed from 77 to 135 K with a T0=15.9 K. [ABSTRACT FROM AUTHOR]