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NpnN double-heterojunction bipolar transistor on InGaAsP/InP.
- Source :
-
Applied Physics Letters . 7/1/1985, Vol. 47 Issue 1, p28. 3p. - Publication Year :
- 1985
-
Abstract
- Double-heterojunction bipolar transistors have been fabricated on InGaAs(P)/InP with current gains of up to 200. Transistors with a p+-InGaAs/N-InP base/collector junction exhibited drastic gain reduction at low collector bias voltages which is ascribed to the electron repelling effect of the conduction-band spike formed at the collector heterojunction. To overcome this complication a thin n-InGaAs transition layer was inserted between the ternary base and the InP wide-gap collector. The resulting nN double-layer collector structure leads to excellent current/voltage characteristics. [ABSTRACT FROM AUTHOR]
- Subjects :
- *BIPOLAR transistors
*INDIUM compounds
*INDIUM phosphide
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 47
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9817765
- Full Text :
- https://doi.org/10.1063/1.96392