Pulsed excimer laser deposition Y1Ba2Cu3O7-x superconductor films on silicon with laser-deposited Y-ZrO2 buffer layer.

The pulsed excimer laser ablation method is used to deposit both the buffer layer of Y-stabilized ZrO2 and the overlayer of Y1Ba2Cu3O7-x superconductor on (100) oriented single-crystal silicon. Process parameter optimization study is carried out and it is shown that a thin film of the superconductor (0.5–0.7 μm) having a zero resistance temperature of 86 K can be obtained using a 0.3 μm buffer layer deposited at substrate temperatures between 600 and 800 °C. [ABSTRACT FROM AUTHOR]