Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition.

MLA

Hsiang Chen, et al. “Electrical, Optical, and Material Characterizations of Blue InGaN Light Emitting Diodes Submitted to Reverse-Bias Stress in Water Vapor Condition.” Journal of Applied Physics, vol. 116, no. 9, Sept. 2014, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.4894831.

APA

Hsiang Chen, Yu-Cheng Chu, Shih-Chang Shei, Yun-Ti Chen, & Chian-You Chen. (2014). Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition. Journal of Applied Physics, 116(9), 1–5. https://doi.org/10.1063/1.4894831

Chicago

Hsiang Chen, Yu-Cheng Chu, Shih-Chang Shei, Yun-Ti Chen, and Chian-You Chen. 2014. “Electrical, Optical, and Material Characterizations of Blue InGaN Light Emitting Diodes Submitted to Reverse-Bias Stress in Water Vapor Condition.” Journal of Applied Physics 116 (9): 1–5. doi:10.1063/1.4894831.