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Pressure sensitive capacitance study in laser-induced chemical vapor deposition processed nanosized Si3N4.
- Source :
-
Review of Scientific Instruments . Jun93, Vol. 64 Issue 6, p1657. 2p. - Publication Year :
- 1993
-
Abstract
- Pressure sensitive capacitance of laser-induced chemical vapor deposition processed nanosized silicon nitride has been studied. It is found that the capacitance varies linearly with the pressure and its sensitivity is as high as 2.64 pf/Torr. The capacitance pressure sensitivity results from the huge interfaces and microvoids existing in the nanomaterials. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SILICON nitride
*CHEMICAL vapor deposition
*ELECTRIC capacity
Subjects
Details
- Language :
- English
- ISSN :
- 00346748
- Volume :
- 64
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Review of Scientific Instruments
- Publication Type :
- Academic Journal
- Accession number :
- 9784776
- Full Text :
- https://doi.org/10.1063/1.1144044