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A high-current density and long lifetime ECR source for oxygen implanters.
- Source :
-
Review of Scientific Instruments . Jan1990, Vol. 61 Issue 1, p253. 3p. - Publication Year :
- 1990
-
Abstract
- A high-current ECR source has been developed for oxygen implanters for use in fabricating separation by implanted oxygen (SIMOX) substrates. The new source has the following features: (1) high-current density (150 mA/cm²) and large extracted current (more than 200 mA), (2) stable and long lifetime operation (more than 200 h), (3) high O[sup +] ratio (more than 80%), and (4) low-divergence beam. The improved performance is obtained by incorporating the following: (1) Localized high-density plasma generation at the center of the plasma chamber. (2) A newly developed multilayer window to satisfy two requirements: efficient coupling of the microwave with high-density plasma and high resistance to high-speed backstream electrons. (3) Optimized combination of plasma chamber length and axial magnetic field distribution. (4) Sophisticated compact magnetic circuit that yields the Optimum magnetic field for obtaining high-density plasma. An industrial-version ECR source was developed for production use on EATON NV-200 implanters. The source was installed on an NV-200 and used to implant oxygen ions to Si wafers. Good performance compared to a duopigatron source was obtained in terms of beam transport efficiency and reliability of source operation. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRON cyclotron resonance sources
*ION implantation
*OXYGEN
Subjects
Details
- Language :
- English
- ISSN :
- 00346748
- Volume :
- 61
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Review of Scientific Instruments
- Publication Type :
- Academic Journal
- Accession number :
- 9783032
- Full Text :
- https://doi.org/10.1063/1.1141311