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Thin film position sensitive detector based on amorphous silicon p–i–n diode.
- Source :
-
Review of Scientific Instruments . Dec1994, Vol. 65 Issue 12, p3784. 3p. - Publication Year :
- 1994
-
Abstract
- The application of hydrogenated amorphous silicon (a-Si:H) to optoelectronic devices are now well established as a viable low cost technology and is presently receiving much interest. Taking advantage of the properties of a-Si:H based devices, single and dual axis large area (up to 80×80 mm²) thin film position sensitive detectors (TFPSD) based on a-Si:H p-i-n diodes have been developed, produced by plasma enhanced chemical vapor deposition. In this study, the main optoelectronic properties presented by the TFPSD as well as their behavior under operation conditions, concerning its linearity and signal to noise ratio, are reported. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN film devices
*SILICON diodes
Subjects
Details
- Language :
- English
- ISSN :
- 00346748
- Volume :
- 65
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Review of Scientific Instruments
- Publication Type :
- Academic Journal
- Accession number :
- 9782313
- Full Text :
- https://doi.org/10.1063/1.1144507