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Electron paramagnetic resonance Q-band bridge with GaAs field-effect transistor signal amplifier and low-noise Gunn diode oscillator.

Authors :
Hyde, James S.
Newton, M. E.
Strangeway, Robert A.
Camenisch, Theodore G.
Froncisz, W.
Source :
Review of Scientific Instruments. Dec1991, Vol. 62 Issue 12, p2969. 7p.
Publication Year :
1991

Abstract

A Varian Q-band E-110 microwave bridge for electron paramagnetic resonance (EPR) spectroscopy has been modified by addition of a low-phase noise Gunn diode oscillator of our own design, a low-noise GaAs field-effect transistor microwave signal amplifier, and a balanced mixer requiring high input power (10 mW) at the local oscillator port. The oscillator has previously been found to have -129 dBc/Hz phase noise, 22 dB lower than for the original klystron. Noise measurements indicate that the microwave amplifier and mixer reduce the overall receiver noise figure by 24.6 dB, a very significant improvement. It is shown that reduction of both phase noise and receiver noise are required in order to achieve full improvement in signal-to-noise ratio over the full range of available microwave power. Spectra of 1.6 × 10[sup -6] M [sup 15]N-perdeutero TEMPONE (1-oxyl-2,2,6,6-tetramethyl-4-piperidone) and of 10[sup -6] M Mn[sup 2+] are shown in order to demonstrate sensitivity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00346748
Volume :
62
Issue :
12
Database :
Academic Search Index
Journal :
Review of Scientific Instruments
Publication Type :
Academic Journal
Accession number :
9782170
Full Text :
https://doi.org/10.1063/1.1142191