Performance evaluation of quantum well infrared phototransistor instrumentation through modeling.

This paper presents a theoretical analysis for the characteristics of quantum well infrared phototransistors (QWIPTs). A mathematical model describing this device is introduced under nonuniformity distribution of quantum wells (QWs). MATLAB environment is used to devise this model. Furthermore, block diagram models through the VisSim environment were used to describe the device characteristics. The developed models are used to investigate the behavior of the device with different values of performance parameters such as bias voltage, spacing between QWs, and temperature. These parameters are tuned to enhance the performance of these quantum phototransistors through the presented modeling. Moreover, the resultant performance characteristics and comparison between both QWIPTs and quantum wire infrared phototransistors are investigated. Also, the obtained results are validated against experimental published work and full agreements are obtained. [ABSTRACT FROM AUTHOR]