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Controllable spin transport in dual-gated silicene.
- Source :
-
Physics Letters A . Jul2014, Vol. 378 Issue 35, p2627-2631. 5p. - Publication Year :
- 2014
-
Abstract
- Based on the dual-gated silicene, we have evaluated theoretically the spin-dependent transport in lateral resonant tunneling structure. By aligning the completely valley-polarized beam with spin-resolved well state in concerned structure, large spin polarization can be expected owing to spin-dependent resonant tunneling mechanism. Under the gate electric field modulation, the forming quantum well state can be externally manipulated, triggering further the emergence of externally-controllable spin polarization. Importantly, integrating the considered structure with a proper valley-filter, which might be constructed from valley-contrasting physics as that in graphene valleytronics, completely-polarized spin beam can also be attained without the assistance of ferromagnetic component, providing thus some profitable strategies to develop nonmagnetic spintronic devices residing on silicene. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03759601
- Volume :
- 378
- Issue :
- 35
- Database :
- Academic Search Index
- Journal :
- Physics Letters A
- Publication Type :
- Academic Journal
- Accession number :
- 97355176
- Full Text :
- https://doi.org/10.1016/j.physleta.2014.05.056