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Nuclear Reaction Models Responsible for Simulation of Neutron-induced Soft Errors in Microelectronics.
- Source :
-
Nuclear Data Sheets . Jun2014, Vol. 120, p254-257. 4p. - Publication Year :
- 2014
-
Abstract
- Terrestrial neutron-induced soft errors in MOSFETs from a 65 nm down to a 25 nm design rule are analyzed by means of multi-scale Monte Carlo simulation using the PHITS-HyENEXSS code system. Nuclear reaction models implemented in PHITS code are validated by comparisons with experimental data. From the analysis of calculated soft error rates, it is clarified that secondary He and H ions provide a major impact on soft errors with decreasing critical charge. It is also found that the high energy component from 10 MeV up to several hundreds of MeV in secondary cosmic-ray neutrons has the most significant source of soft errors regardless of design rule. [ABSTRACT FROM AUTHOR]
- Subjects :
- *NUCLEAR reactions
*NUCLEAR models
*NEUTRONS
*MICROELECTRONICS
*NUCLEAR energy
Subjects
Details
- Language :
- English
- ISSN :
- 00903752
- Volume :
- 120
- Database :
- Academic Search Index
- Journal :
- Nuclear Data Sheets
- Publication Type :
- Academic Journal
- Accession number :
- 97290602
- Full Text :
- https://doi.org/10.1016/j.nds.2014.07.060