Cite
Electronic transport in strained p-modulation Be-doped Ga 0.8 In 0.2 As/GaAs single quantum well.
MLA
Gunes, Mustafa, and Cebrail Gumus. “Electronic Transport in Strained P-Modulation Be-Doped Ga 0.8 In 0.2 As/GaAs Single Quantum Well.” Philosophical Magazine, vol. 94, no. 24, Aug. 2014, pp. 2804–11. EBSCOhost, https://doi.org/10.1080/14786435.2014.934314.
APA
Gunes, M., & Gumus, C. (2014). Electronic transport in strained p-modulation Be-doped Ga 0.8 In 0.2 As/GaAs single quantum well. Philosophical Magazine, 94(24), 2804–2811. https://doi.org/10.1080/14786435.2014.934314
Chicago
Gunes, Mustafa, and Cebrail Gumus. 2014. “Electronic Transport in Strained P-Modulation Be-Doped Ga 0.8 In 0.2 As/GaAs Single Quantum Well.” Philosophical Magazine 94 (24): 2804–11. doi:10.1080/14786435.2014.934314.