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Intersubband absorption at λ ~ 2.1μm in A-plane GaN/AIN multiple quantum wells.
- Source :
-
Electronics Letters (Institution of Engineering & Technology) . 3/20/2003, Vol. 39 Issue 6, p567. 3p. - Publication Year :
- 2003
-
Abstract
- Intersubband optical absorption at λ ∼ 2.1 µm wavelength in doped 17.5 Å wide GaN quantum wells (QWs) with 51 Å wide intermediate AlN barriers is reported. A ∼600 nm thick GaN template and 15 QWs have been grown by molecular beam epitaxy on R-plane sapphire substrate and display pure A-plane orientation. QWs with A-plane orientation are essentially free from spontaneous polarisation, which is expected to greatly simplify the design of GaN/Al(Ga)N devices employing intersubband transitions. [ABSTRACT FROM AUTHOR]
- Subjects :
- *QUANTUM wells
*GALLIUM nitride
*ELECTRONICS
Subjects
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 39
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 9724880
- Full Text :
- https://doi.org/10.1049/el:20030381