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An Improved Transfer Current Model for RF and mm-Wave SiGe(C) Heterojunction Bipolar Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Aug2014, Vol. 61 Issue 8, p2612-2618. 7p. - Publication Year :
- 2014
-
Abstract
- The carrier transport in advanced SiGe heterojunction bipolar transistor (HBT) process technologies exhibits bandgap-related transport effects that not only impact the transconductance and output conductance characteristics, but are also difficult to describe accurately by compact models. This paper addresses the modeling of bandgap-related effects in the collector current by formulating an improved version of a generalized integral charge-control relation (GICCR). As a result, the experimentally observed degradation of the transconductance at low and medium current injection, which is a strong function of the Ge grading, as well as the output conductance are described by simple bias- and temperature-dependent formulations of the GICCR weight factors. The derived formulations fit seamlessly into the compact model HICUM/L2. The extended model shows excellent agreement over a wide bias and temperature range with the experimental data of a large variety of SiGe HBTs from technologies of different manufacturers, including production and most advanced lab processes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 61
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 97237462
- Full Text :
- https://doi.org/10.1109/TED.2014.2325493