Back to Search
Start Over
Monte Carlo simulation of THz frequency range Gunn effect in InP MOSFET at impact ionization conditions.
- Source :
-
AIP Conference Proceedings . Dec2013, Vol. 1566 Issue 1, p385-386. 2p. - Publication Year :
- 2013
-
Abstract
- Results of Monte Carlo simulation of InP MOSFET performance under impact ionization in the conducting channel are presented. The drain current oscillations up to 0.5 THz frequency due to Gunn effect are demonstrated. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 1566
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 97117804
- Full Text :
- https://doi.org/10.1063/1.4848447