Cite
High-fluence Ga-implanted silicon—The effect of annealing and cover layers.
MLA
Fiedler, J., et al. “High-Fluence Ga-Implanted Silicon—The Effect of Annealing and Cover Layers.” Journal of Applied Physics, vol. 116, no. 2, July 2014, pp. 024502-1. EBSCOhost, https://doi.org/10.1063/1.4887450.
APA
Fiedler, J., Heera, V., Hübner, R., Voelskow, M., Germer, S., Schmidt, B., & Skorupa, W. (2014). High-fluence Ga-implanted silicon—The effect of annealing and cover layers. Journal of Applied Physics, 116(2), 024502-1. https://doi.org/10.1063/1.4887450
Chicago
Fiedler, J., V. Heera, R. Hübner, M. Voelskow, S. Germer, B. Schmidt, and W. Skorupa. 2014. “High-Fluence Ga-Implanted Silicon—The Effect of Annealing and Cover Layers.” Journal of Applied Physics 116 (2): 024502-1. doi:10.1063/1.4887450.