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Design and modeling of a new silicon-based tunneling field-effect transistor.
- Source :
-
IEEE Transactions on Electron Devices . Sep96, Vol. 43 Issue 9, p1441. 7p. 3 Black and White Photographs, 2 Diagrams, 1 Chart, 8 Graphs. - Publication Year :
- 1996
-
Abstract
- Features a proposal for a tunneling field-effect transistor (FET). Device structure and operating principle; Modeling; Scaling properties.
- Subjects :
- *FIELD-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 43
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 9701274361
- Full Text :
- https://doi.org/10.1109/16.535330