Structural characterization of AgGaTe2 layers grown on a- and c-sapphire substrates by a closed space sublimation method.

AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2 θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag5Te3 was formed along with the AgGaTe2 when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe2 without Ag5Te3 layers could be grown on a-plane sapphire. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]