Nanomechanical switches based on metal-insulator-metal capacitors from a standard complementary-metal-oxide semiconductor technology.

We report experimental demonstrations of contact-mode nano-electromechanical switches obtained using a capacitor module based on metal-insulator-metal configuration of a standard commercial complementary metal oxide semiconductor technology. The developed 2 terminals Titanium Nitride switches operate at low voltages (~10 V) thanks to its small gap (27nm), showing an excellent ION/IOFF ratio (104) and abrupt behavior (5mV/decade, one decade of current change is achieved with a 5mV voltage variation). A switch configuration is also presented where using two electrodes three different contact mode states can be obtained, adding functionalities to mechanical switches configurations. [ABSTRACT FROM AUTHOR]