Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO2 Gate Dielectric.

MLA

Tang, Wing Man, et al. “Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO2 Gate Dielectric.” IEEE Transactions on Electron Devices, vol. 61, no. 7, July 2014, pp. 2398–403. EBSCOhost, https://doi.org/10.1109/TED.2014.2325042.

APA

Tang, W. M., Aboudi, U., Provine, J., Howe, R. T., & Wong, H.-S. P. (2014). Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO2 Gate Dielectric. IEEE Transactions on Electron Devices, 61(7), 2398–2403. https://doi.org/10.1109/TED.2014.2325042

Chicago

Tang, Wing Man, Uraib Aboudi, J. Provine, Roger T. Howe, and Hon-Sum Philip Wong. 2014. “Improved Performance of Bottom-Contact Organic Thin-Film Transistor Using Al Doped HfO2 Gate Dielectric.” IEEE Transactions on Electron Devices 61 (7): 2398–2403. doi:10.1109/TED.2014.2325042.