Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications.

MLA

Weijie Du, et al. “Analysis of the Electrical Properties of Cr/n-BaSi2 Schottky Junction and n-BaSi2/p-Si Heterojunction Diodes for Solar Cell Applications.” Journal of Applied Physics, vol. 115, no. 22, June 2014, pp. 223701-1-223701–04. EBSCOhost, https://doi.org/10.1063/1.4882117.

APA

Weijie Du, Masakazu Baba, Kaoru Toko, Hara, K. O., Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, & Takashi Suemasu. (2014). Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications. Journal of Applied Physics, 115(22), 223701-1-223701–223704. https://doi.org/10.1063/1.4882117

Chicago

Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, and Takashi Suemasu. 2014. “Analysis of the Electrical Properties of Cr/n-BaSi2 Schottky Junction and n-BaSi2/p-Si Heterojunction Diodes for Solar Cell Applications.” Journal of Applied Physics 115 (22): 223701-1-223701–4. doi:10.1063/1.4882117.