Improved ferroelectric and fatigue properties in Ho doped BiFeO3 thin films.

Abstract: Single-phase multiferroic BiFeO3 and Holmium (Ho) doped BiFeO3 thin films have been prepared via solution–gelation technique. It shows that ferroelectric properties are enhanced and leakage current is reduced obviously after doping Ho. Such improved ferroelectric and leakage properties are attributed to the structural transforms from rhombohedral to the coexistence of tetragonal and orthorhombic symmetry structure after doping Ho. At the mean time, the fatigue behaviors of the present films were improved obviously after doped Ho. The present work provides an available way on enhancing multiferroic and fatigue properties of BiFeO3 based thin films. [Copyright &y& Elsevier]