Cite
Dislocation-related trap levels in nitride-based light emitting diodes.
MLA
Venturi, Giulia, et al. “Dislocation-Related Trap Levels in Nitride-Based Light Emitting Diodes.” Applied Physics Letters, vol. 104, no. 21, May 2014, pp. 1–3. EBSCOhost, https://doi.org/10.1063/1.4879644.
APA
Venturi, G., Castaldini, A., Cavallini, A., Meneghini, M., Zanoni, E., Dandan Zhu, & Humphreys, C. (2014). Dislocation-related trap levels in nitride-based light emitting diodes. Applied Physics Letters, 104(21), 1–3. https://doi.org/10.1063/1.4879644
Chicago
Venturi, Giulia, Antonio Castaldini, Anna Cavallini, Matteo Meneghini, Enrico Zanoni, Dandan Zhu, and Colin Humphreys. 2014. “Dislocation-Related Trap Levels in Nitride-Based Light Emitting Diodes.” Applied Physics Letters 104 (21): 1–3. doi:10.1063/1.4879644.