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Characteristics of nanoporous InGaN/GaN multiple quantum wells.

Authors :
Wang, W.J.
Yang, G.F.
Chen, P.
Yu, Z.G.
Liu, B.
Xie, Z.L.
Xiu, X.Q.
Wu, Z.L.
Xu, F.
Xu, Z.
Hua, X.M.
Zhao, H.
Han, P.
Shi, Y.
Zhang, R.
Zheng, Y.D.
Source :
Superlattices & Microstructures. Jul2014, Vol. 71, p38-45. 8p.
Publication Year :
2014

Abstract

Highlights: [•] A nanoporous InGaN/GaN multiple quantum wells has been fabricated. [•] The overall external quantum efficiency for nanoporous InGaN/GaN MQWs is enhanced. [•] The nanoporous structure led to more light scattering and lower defects density. [Copyright &y& Elsevier]

Subjects

Subjects :
*NANOPOROUS materials
*INDIUM gallium nitride
*QUANTUM wells
*FABRICATION (Manufacturing)
*MOLECULAR structure
*LIGHT scattering

Details

Language :
English
ISSN :
07496036
Volume :
71
Database :
Academic Search Index
Journal :
Superlattices & Microstructures
Publication Type :
Academic Journal
Accession number :
96218327
Full Text :
https://doi.org/10.1016/j.spmi.2014.03.012
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