Time-resolved gain dynamics in InGaN MQWs using a Kerr gate

Authors :: Taylor, R.A.
Smith, J.D.
Rice, J.H.
Ryan, J.F.
Someya, T.
Arakawa, Y.
Source :: Physica E. Apr2003, Vol. 17, p255. 3p.
Publication Year :: 2003
Abstract: The Kerr gate technique is used to time-resolve the gain in an <f>In0.02Ga0.98N/In0.16Ga0.84N</f> multiple quantum well sample. A new way of analyzing the data in such a variable stripe length method gain experiment is used to analyze the time-resolved spectra. The dynamics of the emission and gain are discussed. These measurements suggest that the photoexcited carriers must localize (possibly at indium-rich sites) before strong stimulated emission is seen. [Copyright &y& Elsevier]