Two-surface-plasmon-polariton-absorption based lithography using 400 nm femtosecond laser.

The two-surface-plasmon-polariton-absorption (TSPPA) at the vacuum wavelength of 400 nm is observed, and the subwavelength lithography, by using this nonlinear phenomenon, is demonstrated. Resist patterns with the period of ~138nm have been obtained by exciting the SPP at the Al/resist interface with the 400 nm femtosecond laser. By altering the exposure time, the exposure linewidth reduces from ~90 nm to ~55 nm, which explores the ability of the TSPPA based lithography at the short wavelength. The factors limiting the performance of the proposed TSPPA based lithography are discussed in detail. [ABSTRACT FROM AUTHOR]