Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors.

Highlights: [•] We model the electrical and optical characteristics of (CdS/ZnSe)/BeTe QWIP near 300K. [•] This system is used for the first time in such application. [•] The simulation takes into account three mechanisms of carrier transport: G–R, Diff and TAT processes. [•] The investigations have been performed over a wide range of temperatures and bias voltages. [•] For 1.55μm cutoff wavelength, D * ∼5.7×1010 cmHz1/2/W has been achieved in X BeTe minimum. [ABSTRACT FROM AUTHOR]