Phase formation in intermixed Ni–Ge thin films: Influence of Ge content and low-temperature nucleation of hexagonal nickel germanides.

Highlights: [•] We study phase formation in the Ni–Ge thin film system using in situ XRD and TEM. [•] We deposited Ni films with different Ge concentrations using combinatorial sputtering. [•] A metastable germanide was observed when adding between 36 and 48 at.‰Ge. [•] When adding between 36 and 42 at.% Ge, this phase is already present as-deposited. [ABSTRACT FROM AUTHOR]