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Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions.
- Source :
-
Microelectronic Engineering . May2014, Vol. 120, p163-167. 5p. - Publication Year :
- 2014
-
Abstract
- Highlights: [•] Phase sequence of solid state reactions of ultra-thin 7nm NiPt(10%) films with a Si0.7Ge0.3 layer. [•] In situ X-ray diffraction and sheet resistance (four point probes) measurements. [•] Hexagonal θ-(Ni1 − y Pt y )2(Si1 − x Ge x ). [•] Kinetics study by Kissinger analysis and finite difference simulations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 120
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 95502688
- Full Text :
- https://doi.org/10.1016/j.mee.2013.12.009