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Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions.

Authors :
Bourjot, E.
Putero, M.
Perrin-Pellegrino, C.
Gergaud, P.
Gregoire, M.
Nemouchi, F.
Mangelinck, D.
Source :
Microelectronic Engineering. May2014, Vol. 120, p163-167. 5p.
Publication Year :
2014

Abstract

Highlights: [•] Phase sequence of solid state reactions of ultra-thin 7nm NiPt(10%) films with a Si0.7Ge0.3 layer. [•] In situ X-ray diffraction and sheet resistance (four point probes) measurements. [•] Hexagonal θ-(Ni1 − y Pt y )2(Si1 − x Ge x ). [•] Kinetics study by Kissinger analysis and finite difference simulations. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
01679317
Volume :
120
Database :
Academic Search Index
Journal :
Microelectronic Engineering
Publication Type :
Academic Journal
Accession number :
95502688
Full Text :
https://doi.org/10.1016/j.mee.2013.12.009