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Crystallization and disappearance of defects of the annealed silicon nanowires
- Source :
-
Microelectronic Engineering . Apr2003, Vol. 66 Issue 1-4, p65. 5p. - Publication Year :
- 2003
-
Abstract
- The crystallization and the disappearance of the defects and impurity stress of silicon nanowires (SiNWs) after annealing at high temperature (900 °C) have been investigated. The chemical-vapor-deposition (CVD) and alumina template technology were used for the synthesis of the SiNWs. Then transmission electron microscopy (TEM), selected-area electron diffraction (SAED) and photoluminescence (PL) spectra were used to study the crystallization procedure and the disappearance of defects of the SiNWs. [Copyright &y& Elsevier]
- Subjects :
- *SILICON
*NANOWIRES
*CRYSTALLIZATION
Subjects
Details
- Language :
- English
- ISSN :
- 01679317
- Volume :
- 66
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Microelectronic Engineering
- Publication Type :
- Academic Journal
- Accession number :
- 9545386
- Full Text :
- https://doi.org/10.1016/S0167-9317(03)00026-1