High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon.

MLA

Abdelgader, N., and J. H. Evans-Freeman. “High Resolution Electrical Studies of Vacancy-Rich and Interstitial-Rich Regions in Ion-Implanted Silicon.” Journal of Applied Physics, vol. 93, no. 9, May 2003, p. 5118. EBSCOhost, https://doi.org/10.1063/1.1564286.

APA

Abdelgader, N., & Evans-Freeman, J. H. (2003). High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon. Journal of Applied Physics, 93(9), 5118. https://doi.org/10.1063/1.1564286

Chicago

Abdelgader, N., and J. H. Evans-Freeman. 2003. “High Resolution Electrical Studies of Vacancy-Rich and Interstitial-Rich Regions in Ion-Implanted Silicon.” Journal of Applied Physics 93 (9): 5118. doi:10.1063/1.1564286.