Alternating current admittance of DNTT-based metal-insulator-semiconductor capacitors.

Frequency-dependent carrier dynamics in dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)- based organic field-effect transistors and metal-insulator-semiconductor capacitors were studied by using admittance measurements. Both the real (conductance) and imaginary (capacitance) components of admittance, which have a mutually complementary relationship, were analyzed in the same way. On the basis of an experimental study of devices with different contact geometries, peaks observed in the conductance spectra corresponding to slopes in the capacitance spectra were classified into two groups. The high-frequency peak was attributed to the carrier injection from the top contact to the DNTT/insulator interface just underneath the contact while the low-frequency peaks were attributed to the drift current spreading all over the interface. The model calculation of carrier diffusion reproduces the low-frequency peaks very well. It is shown that the field-effect mobility from the accumulation region to the subthreshold region can be estimated by the fitting. [ABSTRACT FROM AUTHOR]