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Self-Aligned, Vertical-Channel, Polymer Field-Effect Transistors.
- Source :
-
Science . 3/21/2003, Vol. 299 Issue 5614, p1881-1884. 4p. 2 Color Photographs, 2 Graphs. - Publication Year :
- 2003
-
Abstract
- The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar and vertical configurations. Embossing is used for the controlled microcutting of vertical sidewalls into polymer multilayer structures without smearing. Vertical-channel polymer field-effect transistors on flexible poly(ethylene terephthalate) substrates were fabricated, in which the critical channel length of 0.7 to 0.9 micrometers was defined by the thickness of a spin-coated insulator layer. Gate electrodes were self-aligned to minimize overlap capacitance by inkjet printing that used the embossed grooves to define a surface-energy pattern. [ABSTRACT FROM AUTHOR]
- Subjects :
- *TRANSISTOR circuits
*POLYMERS
Subjects
Details
- Language :
- English
- ISSN :
- 00368075
- Volume :
- 299
- Issue :
- 5614
- Database :
- Academic Search Index
- Journal :
- Science
- Publication Type :
- Academic Journal
- Accession number :
- 9442896
- Full Text :
- https://doi.org/10.1126/science.1081279