Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots

Authors :: Xu, Z.C.
Leosson, K.
Birkedal, D.
Hvam, J.M.
Sadowski, J.
Zhao, Z.Y.
Chen, X.S.
Liu, Y.M.
Yang, K.T.
Source :: Journal of Crystal Growth. Apr2003, Vol. 251 Issue 1-4, p177. 4p.
Publication Year :: 2003
Abstract: The change of phonon energies of annealed InGaAs/GaAs quantum dots (QDs), was observed using selectively excited photoluminescence. X-ray diffraction and optical anisotropy analysis shows that the QDs’ structure mainly changes along the growth direction. [Copyright &y& Elsevier]

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