Back to Search
Start Over
Inverse spin Hall effect induced by spin pumping into semiconducting ZnO.
- Source :
-
Applied Physics Letters . 2/3/2014, Vol. 104 Issue 5, p052401-1-052401-4. 4p. 4 Graphs. - Publication Year :
- 2014
-
Abstract
- The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 104
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 94376772
- Full Text :
- https://doi.org/10.1063/1.4863750