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Structural stability and electrical properties of AlB2-type MnB2 under high pressure.

Authors :
Xiang-Xu, Meng
Jing, Fan
Kuo, Bao
Fang-Fei, Li
Xiao-Li, Huang
Yan, Li
Fu-Bo, Tian
De-Fang, Duan
Xi-Lian, Jin
Pin-Wen, Zhu
Zhi, He
Qiang, Zhou
Chun-Xiao, Gao
Bing-Bing, Liu
Tian, Cui
Source :
Chinese Physics B. Jan2014, Vol. 23 Issue 1, p016102-016106. 5p.
Publication Year :
2014

Abstract

The structural stability and electrical properties of AlB2-type MnB2 were studied based on high pressure angle-dispersive x-ray diffraction, in situ electrical resistivity measured in a diamond anvil cell (DAC) and first-principles calculations under high pressure. The x-ray diffraction results show that the structure of AlB2-type MnB2 remains stable up to 42.6 GPa. From the equation of state of MnB2, we obtained a bulk modulus value of 169.9±3.7 GPa with a fixed pressure derivative of 4, which indicates that AlB2-type MnB2 is a hard and incompressible material. The electrical resistance undergoes a transition at about 19.3 GPa, which can be explained by a transition of manganese 3d electrons from localization to delocalization under high pressure. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
16741056
Volume :
23
Issue :
1
Database :
Academic Search Index
Journal :
Chinese Physics B
Publication Type :
Academic Journal
Accession number :
94288338
Full Text :
https://doi.org/10.1088/1674-1056/23/1/016102