Thermal stability of RuZr alloy thin films as the diffusion barrier in Cu metallization.

Authors :: Meng, Y.
Song, Z.X.
Qian, D.
Dai, W.J.
Wang, J.F.
Ma, F.
Li, Y.H.
Xu, K.W.
Source :: Journal of Alloys & Compounds. Mar2014, Vol. 588, p461-464. 4p.
Publication Year :: 2014
Abstract: Highlights: [•] The crystallization of Ru thin films can be suppressed by Zr doping. [•] Amorphous RuZr thin films were fabricated by magnetron sputtering. [•] It could be used to effectively suppress the diffusion between Cu and Si. [ABSTRACT FROM AUTHOR]

Subjects :: *THERMAL stability
*ZIRCONIUM alloys
*THIN films
*DIFFUSION barriers
*COPPER compounds
*METALLIZING
*SEMICONDUCTOR doping
*CRYSTALLIZATION
*MAGNETRON sputtering

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