Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains.

MLA

Grassi, Roberto, et al. “Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains.” IEEE Transactions on Electron Devices, vol. 61, no. 2, Feb. 2014, pp. 617–24. EBSCOhost, https://doi.org/10.1109/TED.2013.2294113.

APA

Grassi, R., Gnudi, A., Lecce, V. D., Gnani, E., Reggiani, S., & Baccarani, G. (2014). Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains. IEEE Transactions on Electron Devices, 61(2), 617–624. https://doi.org/10.1109/TED.2013.2294113

Chicago

Grassi, Roberto, Antonio Gnudi, Valerio Di Lecce, Elena Gnani, Susanna Reggiani, and Giorgio Baccarani. 2014. “Exploiting Negative Differential Resistance in Monolayer Graphene FETs for High Voltage Gains.” IEEE Transactions on Electron Devices 61 (2): 617–24. doi:10.1109/TED.2013.2294113.