Back to Search
Start Over
Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions.
- Source :
-
Journal of Applied Physics . 2014, Vol. 115 Issue 3, p1-5. 5p. 1 Diagram, 7 Graphs. - Publication Year :
- 2014
-
Abstract
- We investigate the barrier imperfection and interfacial scattering effects on resistance-area product (RA) and tunneling magnetoresistance (TMR) of magnesium oxide (MgO) based magnetic tunneling junction (MTJ). We assume that barrier imperfection reduces the band gap of MgO; thus, it affects both TMR and RA values. The lattice mismatch between MgO and magnetic electrodes leads to interface scattering which reduces TMR. As an application, the MTJ two-state resistance variations due to the process variations are also discussed in the paper. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 115
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 93918205
- Full Text :
- https://doi.org/10.1063/1.4862310