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Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP.
- Source :
-
Journal of Applied Physics . Jan2009, Vol. 105 Issue 2, p1-5. 5p. 1 Chart, 5 Graphs. - Publication Year :
- 2009
-
Abstract
- An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60 μm are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the [110] major axis is reported. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 105
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 93915328
- Full Text :
- https://doi.org/10.1063/1.3068196