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Current control for magnetized plasma in direct-current plasma-immersion ion implantation.

Authors :
Tang, Deli
Chu, Paul K.
Source :
Applied Physics Letters. 3/31/2003, Vol. 82 Issue 13, p2014. 3p. 1 Diagram, 2 Graphs.
Publication Year :
2003

Abstract

A method to control the ion current in direct-current plasma-immersion ion implantation (PIII) is reported for low-pressure magnetized inductively coupled plasma. The ion current can be conveniently adjusted by applying bias voltage to the conducting grid that separates plasma formation and implantation (ion acceleration) zones without the need to alter the rf input power, gas flux, or other operating conditions. The ion current that diminishes with an increase in grid bias in magnetized plasmas can be varied from 48 to 1 mA by increasing the grid voltage from 0 to 70 V at 250 kV sample bias and 0.5 mTorr hydrogen pressure. High implantation voltage and monoenergetic immersion implantation can now be achieved by controlling the ion current without varying the macroscopic plasma parameters. The experimental results and interpretation of the effects are presented in this letter. This technique is very attractive for PIII of planar samples that require on-the-fly adjustment of the implantation current at high implantation voltage but low substrate temperature. In some applications such as hydrogen PIII-ion cut, it may obviate the need for complicated sample cooling devices that must work at high voltage. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
*ION implantation
*MAGNETIZATION

Details

Language :
English
ISSN :
00036951
Volume :
82
Issue :
13
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
9377474
Full Text :
https://doi.org/10.1063/1.1564638