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A phase field model for dislocation climb.

Authors :
Geslin, Pierre-Antoine
Appolaire, Benoît
Finel, Alphonse
Source :
Applied Physics Letters. 1/6/2014, Vol. 104 Issue 1, p011903-1-011903-4. 4p. 1 Chart, 1 Graph.
Publication Year :
2014

Abstract

We propose a phase field method to model consistently dislocation climb by vacancy absorption or emission. It automatically incorporates the exact balance between the vacancy flux and the phase field associated with the dislocation evolution, enforced by the conserved character of the total population of vacancies. One of its major advantage is the natural introduction of a dynamic coefficient controlling the kinetics of vacancy emission/absorption by the dislocation. We also derived a closed-form expression of the climb rate valid from the diffusion-limited to the attachment-limited regimes. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
104
Issue :
1
Database :
Academic Search Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
93644401
Full Text :
https://doi.org/10.1063/1.4860999