Comparative analysis of thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance.

Highlights: [•] The thermal stability of the SiGe/SiO2 interfaces of (100)Si/SiO2/Ge0.75S0.25/SiO2 structures has been studied. [•] The SiGe/SiO2 interface is found to be vulnerable to degradation by post growth thermal treatment in vacuum and hydrogen at temperatures ≳440°C. [•] No significant difference was found in thermal degradation of the SiGe/SiO2 interface between vacuum and H2 ambient. [•] A full review was made by comparing data to previous studies done on (100) and (111)Si/SiO2 interfaces. [•] Unlike Si/SiO2, H2 has no catalytic effect on thermal degradation of the SiGe/SiO2 interface. [•] The temperature of technological passivation treatment of the SiGe/SiO2 interface should not exceed 440°C. [ABSTRACT FROM AUTHOR]