Cite
High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N′-ditridecyl perylene diimide.
MLA
Ma, Lanchao, et al. “High-Mobility, Air Stable Bottom-Contact n-Channel Thin Film Transistors Based on N,N′-Ditridecyl Perylene Diimide.” Applied Physics Letters, vol. 103, no. 20, Nov. 2013, p. 203303. EBSCOhost, https://doi.org/10.1063/1.4831971.
APA
Ma, L., Guo, Y., Wen, Y., Liu, Y., & Zhan, X. (2013). High-mobility, air stable bottom-contact n-channel thin film transistors based on N,N′-ditridecyl perylene diimide. Applied Physics Letters, 103(20), 203303. https://doi.org/10.1063/1.4831971
Chicago
Ma, Lanchao, Yunlong Guo, Yugeng Wen, Yunqi Liu, and Xiaowei Zhan. 2013. “High-Mobility, Air Stable Bottom-Contact n-Channel Thin Film Transistors Based on N,N′-Ditridecyl Perylene Diimide.” Applied Physics Letters 103 (20): 203303. doi:10.1063/1.4831971.