Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors.

In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm2/(V s) has been demonstrated. [ABSTRACT FROM AUTHOR]