Phase change characteristics of Sb-rich Ga–Sb–Se materials.

Highlights: [•] Phase change behavior of Sb-rich Ga–Sb–Se was studied for phase change memory. [•] Sb-rich Ga–Sb–Se films possess crystallization temperature higher than 225°C. [•] Sb-rich Ga–Sb–Se film has retention ability in excess of 135°C for 10years. [•] Compared with Ge2Sb2Te5, Ga10Sb60Se30 has fast crystallization speed. [ABSTRACT FROM AUTHOR]