2.5–3.5 μm optically pumped GaInSb/AlGaInSb multiple quantum well lasers grown on AlInSb metamorphic buffer layers.

Room-temperature emission is observed as long as 3.26 µm in optically pumped type-I quantum well lasers on relaxed epitaxial layers grown by molecular-beam epitaxy. A superlattice is used to filter dislocations in the metamorphic buffer to reduce Shockley-Read-Hall losses. The longest wavelength emission of 3.45 µm from these structures is observed at 170 K, and the brightest room-temperature laser emits 0.5 W/facet peak power at 2.81 µm. It has a low threshold power density of 169 W/cm² and a differential quantum efficiency of 28%. The characteristic temperatures, T[sub 0] and T[sub 1], are 119 K and 171 K, respectively. Stimulated emission is observed in this sample at a maximum operating temperature of 370 K. [ABSTRACT FROM AUTHOR]