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Vertical and lateral mobilities in n-(Ga, Mn)N.
- Source :
-
Applied Physics Letters . 3/10/2003, Vol. 82 Issue 10, p1565. 3p. 1 Diagram, 1 Chart, 3 Graphs. - Publication Year :
- 2003
-
Abstract
- Lateral electron mobilities in 0.2-µm-thick n-(Ga, Mn)N films were obtained from Hall measurements, producing values of 116∼ 102 cm²/V s in the temperature range from 298 to 373 K. These values are comparable to, but slightly lower than, electron mobilities in n-GaN of the same electron concentration. By sharp contrast, analysis of the reverse saturation current in mesa Schottky diodes fabricated in the n-(Ga, Mn)N show vertical electron mobilities of 840∼336 cm²/V s in the temperature range from 298 to 373 K. This is consistent with a reduction in electron scattering by charged dislocations for vertical transport geometries [M. Misra, A. V. Sampath, and T. D. Moustakas, Appl. Phys. Lett. 76, 1045 (2000)]. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRON mobility
*THIN films
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 82
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 9214405
- Full Text :
- https://doi.org/10.1063/1.1559442